Aspects of point defects in coherent terahertz-wave spectroscopyNISHIZAWA, Jun-Ichi; SASAKI, Tetsuo; OYAMA, Yutaka et al.Physica. B, Condensed matter. 2007, Vol 401-02, pp 677-681, issn 0921-4526, 5 p.Conference Paper

Fabrication of C₆₀ nanostructures by selective growth on GaSe/MoS₂ and InSe/MoS₂ heterostructure substratesUENO, K; SASAKI, K; NAKAHARA, T et al.Applied surface science. 1998, Vol 130-32, pp 670-675, issn 0169-4332Conference Paper

The use of 7LiOH-impregnated filters for the collection of acidic gases and analysis by instrumental neutron activation analysis = Utilisation de filtres imprégnés de 7LIOH pour la collecte de gaz acides et l'analyse par activation neutroniqueFINNEGAN, D. L; KOTRA, J. P; HERMANN, D. M et al.Bulletin of volcanology (Print). 1989, Vol 51, Num 2, pp 83-87, issn 0258-8900Article

DISLOCATION STUDIES IN GASE BY ETCHING AND X-RAY TOPOGRAPHY TECHNIQUESSCANDALE E; SCORDARI F.1978; R.C. SOC. ITAL. MINERAL. PETROL.; ITA; DA. 1978; VOL. 34; NO 2; PP. 731-739; ABS. ITA; BIBL. 13 REF.; 8 ILL.Article

Cathodoluminescence studies of thermally oxidized cleaved surfaces of gallium selenide layered crystalsSAVCHYN, V. P; STAKHIRA, J. M.Physica status solidi. A. Applied research. 1996, Vol 156, Num 1, pp 113-118, issn 0031-8965Article

Electrical properties of nitrogen implanted GaSe single crystalKARABULUT, O; PARLAK, M; TURAN, R et al.Crystal research and technology (1979). 2003, Vol 38, Num 9, pp 811-816, issn 0232-1300, 6 p.Article

Annealing effect on electrical and photoconductive properties of Si implanted GaSe single crystalKARABULUT, O; PARLAK, M; YILMAZ, K et al.Crystal research and technology (1979). 2003, Vol 38, Num 12, pp 1071-1076, issn 0232-1300, 6 p.Article

Photoluminescence spectra of nitrogen implanted GaSe crystalsKARABULUT, M; BILIR, G; MAMEDOV, G. M et al.Journal of luminescence. 2008, Vol 128, Num 10, pp 1551-1555, issn 0022-2313, 5 p.Article

On the growth process of a layered material on a covalent substrate : GaSe/SiJEDRECY, N; PINCHAUX, R; EDDRIEF, M et al.Physica. B, Condensed matter. 1998, Vol 248, pp 67-73, issn 0921-4526Conference Paper

Switching in amorphous gallium selenide filmsMUSTAFAEVA, S. N.Inorganic materials. 1996, Vol 32, Num 9, pp 943-946, issn 0020-1685Article

Synthesis and photoluminescence properties of semiconductor nanowiresBAI, Z. G; YU, D. P; WANG, J. J et al.Materials science & engineering. B, Solid-state materials for advanced technology. 2000, Vol 72, Num 2-3, pp 117-120, issn 0921-5107Conference Paper

Elastic properties of GaSe films epitaxially grown on the Si(111)1 × 1-H surface, studied by Brillouin scatteringPANELLA, V; CARLOTTI, G; SOCINO, G et al.Journal of physics. Condensed matter (Print). 1999, Vol 11, Num 35, pp 6661-6668, issn 0953-8984Article

The GaSe/Si(111) interface : a core level studyAMOKRANE, A; SEBENNE, C. A; CRICENTI, A et al.Applied surface science. 1998, Vol 123-24, pp 619-625, issn 0169-4332Conference Paper

Transient coherent emission from anisotropic semiconductors studied with phase-locked pulse pairsMITSUMORI, Yasuyoshi; MINAMI, Fujio.Journal of luminescence. 2001, Vol 94-95, pp 663-666, issn 0022-2313Conference Paper

Silicon(111) surface properties upon UHV thermal dissociation of a GaSe epitaxial layerREQQASS, H; LACHARME, J.-P; SEBENNE, C et al.Surface science. 1995, Vol 331-333, pp 464-467, issn 0039-6028, aConference Paper

Optical transitions coupled with the two-dimensional surface subbandsMELICKSETYAN, V. A; AROUTIOUNIAN, V. M; MARGARYAN, H. L et al.Applied surface science. 1998, Vol 134, Num 1-4, pp 267-270, issn 0169-4332Conference Paper

Transient optical reflectivity in layered semiconductorsHASEGAWA, A; KURODA, T; INOUE, K et al.Journal of luminescence. 1994, Vol 58, Num 1-6, pp 234-236, issn 0022-2313Conference Paper

Solar spectral influence on the performance of photovoltaic (PV) modules under fine weather and cloudy weather conditionsISHII, Tetsuyuki; OTANI, Kenji; TAKASHIMA, Takumi et al.Progress in photovoltaics (Print). 2013, Vol 21, Num 4, pp 481-489, issn 1062-7995, 9 p.Article

CdTe, CIGS and a-Si thin film PV technologies: factors impacting LCOEELDADA, Louay.Proceedings of SPIE, the International Society for Optical Engineering. 2011, Vol 8110, issn 0277-786X, isbn 978-0-8194-8720-9, 81100R.1-81100R.6Conference Paper

Effect of ZnO buffer layer on AZO film properties and photovoltaic applicationsSHI, J. H; HUANG, S. M; YIN, X. J et al.Journal of materials science. Materials in electronics. 2010, Vol 21, Num 10, pp 1005-1013, issn 0957-4522, 9 p.Article

Enhancement of terahertz wave difference frequency generation based on a compact walk-off compensated KTP OPOKAI ZHONG; JIANQUAN YAO; DEGANG XU et al.Optics communications. 2010, Vol 283, Num 18, pp 3520-3524, issn 0030-4018, 5 p.Article

Intercalation Induced Electret Effect in GaSe and InSe Crystals : Experiment and TheorySTASYUK, I. V; GRYGORCHAK, I. I; VELYCHKO, O. V et al.Ferroelectrics (Print). 2008, Vol 362, pp 115-122, issn 0015-0193, 8 p.Article

Boron-doped zinc oxide thin films for large-area solar cells grown by metal organic chemical vapor depositionCHEN, X. L; XU, B. H; XUE, J. M et al.Thin solid films. 2007, Vol 515, Num 7-8, pp 3753-3759, issn 0040-6090, 7 p.Article

Estimation of the amount of the proton injected into tungsten oxide thin films during deposition using spectroscopic ellipsometryYAMADA, Y; KAWAJI, S; BAO, S et al.Thin solid films. 2007, Vol 515, Num 7-8, pp 3825-3829, issn 0040-6090, 5 p.Article

Lattice-matched InAlN/GaN two-dimensional electron gas with high mobility and sheet carrier density by plasma-assisted molecular beam epitaxyJEGANATHAN, K; SHIMIZU, M; OKUMURA, H et al.Journal of crystal growth. 2007, Vol 304, Num 2, pp 342-345, issn 0022-0248, 4 p.Article